Granted Patent
Utility
US 6,525,376 · App. 09/235,670
High withstand voltage insulated gate N-channel field effect transistor
Inventors:
Hirofumi Harada, Jun Osanai
Patented Case
View Patent ↗
Granted: Feb 25, 2003
Filed: Jan 22, 1999
Inventors
Hirofumi Harada
Jun Osanai
Assignee (at issue)
SEIKO INSTRUMENTS INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.