Granted Patent
Utility
US 6,528,845 · App. 09/616,569
Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
Inventors:
Jeffrey D. Bude, Richard J. McPartland, Ranbir Singh
Patented Case
View Patent ↗
Granted: Mar 4, 2003
Filed: Jul 14, 2000
Inventors
Jeffrey D. Bude
Richard J. McPartland
Ranbir Singh
Assignee (at issue)
LUCENT TECHNOLOGIES INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.