IP Library Granted Patent US 6,531,349
Granted Patent Utility
US 6,531,349 · App. 09/790,075

Method of etching polycrystalline silicon film by using two consecutive dry-etching processes

Inventors: Kazuyoshi Yoshida, Nobuyuki Ikezawa
Patented Case View Patent ↗
Granted: Mar 11, 2003 Filed: Feb 21, 2001
Inventors
Kazuyoshi Yoshida
Nobuyuki Ikezawa
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,531,349
App. No.
09/790,075
Filed
2001-02-21
Granted
2003-03-11
Kind
B2