Granted Patent
Utility
US 6,531,349 · App. 09/790,075
Method of etching polycrystalline silicon film by using two consecutive dry-etching processes
Inventors:
Kazuyoshi Yoshida, Nobuyuki Ikezawa
Patented Case
View Patent ↗
Granted: Mar 11, 2003
Filed: Feb 21, 2001
Inventors
Kazuyoshi Yoshida
Nobuyuki Ikezawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.