Granted Patent
Utility
US 6,531,368 · App. 09/825,750
Method of fabricating a semiconductor device having a metal oxide high-k gate insulator by localized laser irradiation and a device thereby formed
Inventor:
Bin Yu
Patented Case
View Patent ↗
Granted: Mar 11, 2003
Filed: Apr 3, 2001
Inventor
Bin Yu
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.