Granted Patent
Utility
US 6,531,369 · App. 10/075,700
Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
Inventors:
Cengiz S. Ozkan, Abderrahmane Salmi
Patented Case
View Patent ↗
Granted: Mar 11, 2003
Filed: Feb 14, 2002
Inventors
Cengiz S. Ozkan
Abderrahmane Salmi
Assignee (at issue)
APPLIED MICRO CIRCUITS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.