Granted Patent
Utility
US 6,531,376 · App. 10/123,657
Method of making a semiconductor device with a low permittivity region
Inventors:
Weizhong Cai, Chandrasekhara Sudhama, Yujing Wu, Keith Kamekona
Patented Case
View Patent ↗
Granted: Mar 11, 2003
Filed: Apr 17, 2002
Inventors
Weizhong Cai
Chandrasekhara Sudhama
Yujing Wu
Keith Kamekona
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.