IP Library › Granted Patent US 6,531,739
Granted Patent Utility
US 6,531,739 · App. 09/828,289

Radiation-hardened silicon-on-insulator CMOS device, and method of making the same

Inventors: James S. Cable, Eugene F. Lyons, Michael A. Stuber, Mark L. Burgener
Patented Case View Patent ↗
Granted: Mar 11, 2003 Filed: Apr 5, 2001
Inventors
James S. Cable
Eugene F. Lyons
Michael A. Stuber
Mark L. Burgener
Assignee (at issue)
Peregrine Semiconductor Corporation

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Quick Facts
Patent No.
US 6,531,739
App. No.
09/828,289
Filed
2001-04-05
Granted
2003-03-11
Kind
B2