IP Library › Granted Patent US 6,532,173
Granted Patent Utility
US 6,532,173 · App. 10/101,846

Nonvolatile semiconductor memory device with mechanism to prevent leak current

Inventors: Osamu Iioka, Naoto Emi, Atsushi Shoji, Hiroshi Mawatari
Patented Case View Patent ↗
Granted: Mar 11, 2003 Filed: Mar 21, 2002
Inventors
Osamu Iioka
Naoto Emi
Atsushi Shoji
Hiroshi Mawatari
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 6,532,173
App. No.
10/101,846
Filed
2002-03-21
Granted
2003-03-11
Kind
B2