IP Library › Granted Patent US 6,533,874
Granted Patent Utility
US 6,533,874 · App. 09/656,595

GaN-based devices using thick (Ga, Al, In)N base layers

Inventors: Robert P. Vaudo, Joan M. Redwing, Michael A. Tischler, Duncan W. Brown, Jeffrey S. Flynn
Patented Case View Patent ↗
Granted: Mar 18, 2003 Filed: Sep 7, 2000
Inventors
Robert P. Vaudo
Joan M. Redwing
Michael A. Tischler
Duncan W. Brown
Jeffrey S. Flynn
Assignee (at issue)
ADVANCED TECHNOLOGY & MATERIALS CO., LTD.

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Quick Facts
Patent No.
US 6,533,874
App. No.
09/656,595
Filed
2000-09-07
Granted
2003-03-18
Kind
B1