Granted Patent
Utility
US 6,534,366 · App. 09/816,717
Method of fabricating trench-gated power MOSFET
Inventors:
Jacek Korec, Mohamed N. Darwish, Dorman C. Pitzer
Patented Case
View Patent ↗
Granted: Mar 18, 2003
Filed: Mar 21, 2001
Inventors
Jacek Korec
Mohamed N. Darwish
Dorman C. Pitzer
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.