Granted Patent
Utility
US 6,545,295 · App. 10/137,923
Transistor having ammonia free nitride between its gate electrode and gate insulation layers
Inventors:
John Batey, Peter M. Fryer, Jun-Hyung Souk
Patented Case
View Patent ↗
Granted: Apr 8, 2003
Filed: May 2, 2002
Inventors
John Batey
Peter M. Fryer
Jun-Hyung Souk
Assignee (at issue)
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.