InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer

Granted: Apr 8, 2003 Filed: Oct 31, 2001

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.