IP Library Granted Patent US 6,548,340
Granted Patent Utility
US 6,548,340 · App. 09/779,924

Method of fabricating a DRAM transistor with a dual gate oxide technique

Inventor: Fernando Gonzalez
Patented Case View Patent ↗
Granted: Apr 15, 2003 Filed: Feb 8, 2001
Inventor
Fernando Gonzalez
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,548,340
App. No.
09/779,924
Filed
2001-02-08
Granted
2003-04-15
Kind
B2