Granted Patent
Utility
US 6,548,421 · App. 09/560,337
Method for forming a refractory-metal-silicide layer in a semiconductor device
Inventors:
Nobuaki Hamanaka, Ken Inoue, Kaoru Mikagi
Patented Case
View Patent ↗
Granted: Apr 15, 2003
Filed: Apr 28, 2000
Inventors
Nobuaki Hamanaka
Ken Inoue
Kaoru Mikagi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.