Granted Patent
Utility
US 6,548,865 · App. 09/799,430
High breakdown voltage MOS type semiconductor apparatus
Inventors:
Tatsuhiko Fujihira, Takeyoshi Nishimura, Takashi Kobayashi
Patented Case
View Patent ↗
Granted: Apr 15, 2003
Filed: Mar 5, 2001
Inventors
Tatsuhiko Fujihira
Takeyoshi Nishimura
Takashi Kobayashi
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.