IP Library Granted Patent US 6,548,876
Granted Patent Utility
US 6,548,876 · App. 09/987,073

Semiconductor device of sub-micron or high voltage CMOS structure and method for manufacturing the same

Inventor: Jae-Il Ju
Patented Case View Patent ↗
Granted: Apr 15, 2003 Filed: Nov 13, 2001
Inventor
Jae-Il Ju
Assignee (at issue)
SK hynix Inc.

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Quick Facts
Patent No.
US 6,548,876
App. No.
09/987,073
Filed
2001-11-13
Granted
2003-04-15
Kind
B2