Granted Patent
Utility
US 6,549,445 · App. 10/118,126
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof
Inventors:
Tsukasa Ooishi, Hiroaki Tanizaki
Patented Case
View Patent ↗
Granted: Apr 15, 2003
Filed: Apr 9, 2002
Inventors
Tsukasa Ooishi
Hiroaki Tanizaki
Assignees (at issue)
MITSUBISHI ELECTRIC CORPORATION
MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.