Granted Patent
Utility
US 6,552,373 · App. 09/818,587
Hetero-junction field effect transistor having an intermediate layer
Inventors:
Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara, Kensuke Kasahara, Kazuaki Kunihiro, Yuji Takahashi, Tatsuo Nakayama, Nobuyuki Hayama, Yasuo Ohno
Patented Case
View Patent ↗
Granted: Apr 22, 2003
Filed: Mar 28, 2001
Inventors
Yuji Ando
Hironobu Miyamoto
Naotaka Iwata
Koji Matsunaga
Masaaki Kuzuhara
Kensuke Kasahara
Kazuaki Kunihiro
Yuji Takahashi
Tatsuo Nakayama
Nobuyuki Hayama
Yasuo Ohno
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.