Granted Patent
Utility
US 6,552,391 · App. 09/767,092
Low voltage dual-well trench MOS device
Inventors:
Jun Zeng, Carl F. Wheatley, Jr.
Patented Case
View Patent ↗
Granted: Apr 22, 2003
Filed: Jan 22, 2001
Inventors
Jun Zeng
Carl F. Wheatley, Jr.
Assignee (at issue)
FAIRCHILD SEMICONDUCTOR CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.