Granted Patent
Utility
US 6,553,046 · App. 09/860,455
High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap
Inventors:
Fujio Akinaga, Toshiaki Fukunaga, Mitsugu Wada
Patented Case
View Patent ↗
Granted: Apr 22, 2003
Filed: May 21, 2001
Inventors
Fujio Akinaga
Toshiaki Fukunaga
Mitsugu Wada
Assignee (at issue)
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.