Granted Patent
Utility
US 6,555,877 · App. 09/939,552
NMOSFET with negative voltage capability formed in P-type substrate and method of making the same
Inventors:
Mohamed Imam, Raj Nair, Mohammed Tanvir Quddus, Masaru Suzuki, Takeshi Ishiguro, Jefferson W. Hall
Patented Case
View Patent ↗
Granted: Apr 29, 2003
Filed: Aug 27, 2001
Inventors
Mohamed Imam
Raj Nair
Mohammed Tanvir Quddus
Masaru Suzuki
Takeshi Ishiguro
Jefferson W. Hall
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.