IP Library Granted Patent US 6,555,890
Granted Patent Utility
US 6,555,890 · App. 09/863,836

Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes

Inventors: J. Christopher Dries, Michael Lange
Patented Case View Patent ↗
Granted: Apr 29, 2003 Filed: May 23, 2001
Inventors
J. Christopher Dries
Michael Lange
Assignee (at issue)
Sensors Incorporated

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Quick Facts
Patent No.
US 6,555,890
App. No.
09/863,836
Filed
2001-05-23
Granted
2003-04-29
Kind
B2