Granted Patent
Utility
US 6,559,023 · App. 10/073,528
Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereof
Inventors:
Masahito Otsuki, Seiji Momota, Mitsuaki Kirisawa, Takashi Yoshimura
Patented Case
View Patent ↗
Granted: May 6, 2003
Filed: Feb 11, 2002
Inventors
Masahito Otsuki
Seiji Momota
Mitsuaki Kirisawa
Takashi Yoshimura
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.