Granted Patent
Utility
US 6,559,033 · App. 09/892,250
Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
Inventors:
John Hu, Kai Zhang, Senthil Arthanari, Hong-Qiang Lu
Patented Case
View Patent ↗
Granted: May 6, 2003
Filed: Jun 27, 2001
Inventors
John Hu
Kai Zhang
Senthil Arthanari
Hong-Qiang Lu
Assignee (at issue)
LSI Logic Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.