Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers

Granted: May 6, 2003 Filed: Dec 11, 2001

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.