IP Library Granted Patent US 6,562,695
Granted Patent Utility
US 6,562,695 · App. 09/889,018

Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing

Inventors: Norio Suzuki, Hiroyuki Ichizoe, Masayuki Kojima, Keiji Okamoto, Shinichi Horibe, Kozo Watanabe, Yasuko Yoshida, Shuji Ikeda, Akira Takamatsu, Norio Ishitsuka, Atsushi Ogishima, Maki Shimoda
Patented Case View Patent ↗
Granted: May 13, 2003 Filed: Jul 10, 2001
Inventors
Norio Suzuki
Hiroyuki Ichizoe
Masayuki Kojima
Keiji Okamoto
Shinichi Horibe
Kozo Watanabe
Yasuko Yoshida
Shuji Ikeda
Akira Takamatsu
Norio Ishitsuka
Atsushi Ogishima
Maki Shimoda
Assignees (at issue)
HITACHI, LTD.
Hitachi Ulsi Systems Co., Ltd.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,562,695
App. No.
09/889,018
Filed
2001-07-10
Granted
2003-05-13
Kind
B1