IP Library Granted Patent US 6,566,041
Granted Patent Utility
US 6,566,041 · App. 09/757,841

Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process

Inventors: Haruo Iwasaki, Shinji Ishida, Tsuyoshi Yoshii
Patented Case View Patent ↗
Granted: May 20, 2003 Filed: Jan 10, 2001
Inventors
Haruo Iwasaki
Shinji Ishida
Tsuyoshi Yoshii
Assignee (at issue)
NEC Electronics Corporation

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Quick Facts
Patent No.
US 6,566,041
App. No.
09/757,841
Filed
2001-01-10
Granted
2003-05-20
Kind
B2