Granted Patent
Utility
US 6,566,150 · App. 10/171,695
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
Inventors:
Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe
Patented Case
View Patent ↗
Granted: May 20, 2003
Filed: Jun 17, 2002
Inventors
Ryuji Kohno
Tetsuo Kumazawa
Makoto Kitano
Akihiko Ariga
Yuji Wada
Naoto Ban
Shuji Shibuya
Yasuhiro Motoyama
Kunio Matsumoto
Susumu Kasukabe
Terutaka Mori
Hidetaka Shigi
Takayoshi Watanabe
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.