Granted Patent
Utility
US 6,566,677 · App. 09/813,122
Nitride-based semiconductor device and manufacturing method thereof
Inventors:
Takashi Kano, Hiroki Ohbo
Patented Case
View Patent ↗
Granted: May 20, 2003
Filed: Mar 21, 2001
Inventors
Takashi Kano
Hiroki Ohbo
Assignee (at issue)
SANYO ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.