Granted Patent
Utility
US 6,569,726 · App. 10/154,604
Method of manufacturing MOS transistor with fluoride implantation on silicon nitride etching stop layer
Inventors:
Tong-Hsin Lee, Terry Chen
Patented Case
View Patent ↗
Granted: May 27, 2003
Filed: May 22, 2002
Inventors
Tong-Hsin Lee
Terry Chen
Assignee (at issue)
WINBOND ELECTRONICS CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.