Granted Patent
Utility
US 6,569,738 · App. 09/898,652
Process for manufacturing trench gated MOSFET having drain/drift region
Inventor:
Mohamed N. Darwish
Patented Case
View Patent ↗
Granted: May 27, 2003
Filed: Jul 3, 2001
Inventor
Mohamed N. Darwish
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.