Granted Patent
Utility
US 6,569,766 · App. 09/697,508
Method for forming a silicide of metal with a high melting point in a semiconductor device
Inventors:
Nobuaki Hamanaka, Ken Inoue, Kaoru Mikagi
Patented Case
View Patent ↗
Granted: May 27, 2003
Filed: Oct 27, 2000
Inventors
Nobuaki Hamanaka
Ken Inoue
Kaoru Mikagi
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.