Granted Patent
Utility
US 6,569,776 · App. 10/124,398
Method of removing silicon nitride film formed on a surface of a material with a process gas containing a higher-order fluorocarbon in combination with a lower-order fluorocarbon
Inventor:
Yasuhiko Ueda
Patented Case
View Patent ↗
Granted: May 27, 2003
Filed: Apr 18, 2002
Inventor
Yasuhiko Ueda
Assignees (at issue)
NEC Electronics Corporation
HITACHI, LTD.
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.