Granted Patent
Utility
US 6,573,169 · App. 09/964,172
Highly conductive composite polysilicon gate for CMOS integrated circuits
Inventors:
Wendell P. Noble, Leonard Forbes
Patented Case
View Patent ↗
Granted: Jun 3, 2003
Filed: Sep 26, 2001
Inventors
Wendell P. Noble
Leonard Forbes
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.