IP Library › Granted Patent US 6,573,180
Granted Patent Utility
US 6,573,180 · App. 10/101,776

PECVD method of forming a tungsten silicide layer on a polysilicon layer

Inventor: Jai-Hyung Won
Patented Case View Patent ↗
Granted: Jun 3, 2003 Filed: Mar 21, 2002
Inventor
Jai-Hyung Won
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.

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Quick Facts
Patent No.
US 6,573,180
App. No.
10/101,776
Filed
2002-03-21
Granted
2003-06-03
Kind
B2