Granted Patent
Utility
US 6,573,192 · App. 09/667,053
Dual thickness gate oxide fabrication method using plasma surface treatment
Inventor:
Heon Lee
Patented Case
View Patent ↗
Granted: Jun 3, 2003
Filed: Sep 21, 2000
Inventor
Heon Lee
Assignee (at issue)
Infineon Technologies AG
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.