Granted Patent
Utility
US 6,573,548 · App. 10/033,690
DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
Inventors:
Wingyu Leung, Fu-Chieh Hsu
Patented Case
View Patent ↗
Granted: Jun 3, 2003
Filed: Nov 2, 2001
Inventors
Wingyu Leung
Fu-Chieh Hsu
Assignee (at issue)
Monolithic System Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.