IP Library Granted Patent US 6,573,561
Granted Patent Utility
US 6,573,561 · App. 10/096,192

Vertical MOSFET with asymmetrically graded channel doping

Inventors: Dureseti Chidambarrao, Ramachandra Divakaruni, Jack A. Mandelman, Kevin McStay
Patented Case View Patent ↗
Granted: Jun 3, 2003 Filed: Mar 11, 2002
Inventors
Dureseti Chidambarrao
Ramachandra Divakaruni
Jack A. Mandelman
Kevin McStay
Assignees (at issue)
International Business Machines Corporation
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,573,561
App. No.
10/096,192
Filed
2002-03-11
Granted
2003-06-03
Kind
B1