Granted Patent
Utility
US 6,573,575 · App. 09/684,840
DRAM MOS field effect transistors with thresholds determined by differential gate doping
Inventor:
Yasushi Yamazaki
Patented Case
View Patent ↗
Granted: Jun 3, 2003
Filed: Oct 6, 2000
Inventor
Yasushi Yamazaki
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.