Granted Patent
Utility
US 6,576,502 · App. 09/693,992
Method for forming LDD/offset structure of thin film transistor
Inventor:
Hye-Dong Kim
Patented Case
View Patent ↗
Granted: Jun 10, 2003
Filed: Oct 23, 2000
Inventor
Hye-Dong Kim
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.