Granted Patent
Utility
US 6,576,967 · App. 09/663,919
Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
Inventors:
James K. Schaeffer, Mark V. Raymond, Bich-Yen Nguyen
Patented Case
View Patent ↗
Granted: Jun 10, 2003
Filed: Sep 18, 2000
Inventors
James K. Schaeffer
Mark V. Raymond
Bich-Yen Nguyen
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.