Granted Patent
Utility
US 6,579,779 · App. 09/704,900
Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zone
Inventor:
Robert J. Falster
Patented Case
View Patent ↗
Granted: Jun 17, 2003
Filed: Nov 2, 2000
Inventor
Robert J. Falster
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.