IP Library Granted Patent US 6,581,669
Granted Patent Utility
US 6,581,669 · App. 09/829,434

Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation

Inventors: Martin Weigert, Uwe Konietzka
Patented Case View Patent ↗
Granted: Jun 24, 2003 Filed: Apr 10, 2001
Inventors
Martin Weigert
Uwe Konietzka
Assignee (at issue)
W.C. Heraeus GmbH & Co. KG

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Quick Facts
Patent No.
US 6,581,669
App. No.
09/829,434
Filed
2001-04-10
Granted
2003-06-24
Kind
B2