Granted Patent
Utility
US 6,586,068 · App. 09/704,893
Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof
Inventors:
Robert J. Falster, Marco Cornara, Daniela Gambaro, Massimiliano Olmo
Patented Case
View Patent ↗
Granted: Jul 1, 2003
Filed: Nov 2, 2000
Inventors
Robert J. Falster
Marco Cornara
Daniela Gambaro
Massimiliano Olmo
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.