Granted Patent
Utility
US 6,586,288 · App. 09/982,841
Method of forming dual-metal gates in semiconductor device
Inventors:
Tae-Kyun Kim, Tae-Ho Cha, Jeong-Youb Lee, Se-Aug Jang
Patented Case
View Patent ↗
Granted: Jul 1, 2003
Filed: Oct 18, 2001
Inventors
Tae-Kyun Kim
Tae-Ho Cha
Jeong-Youb Lee
Se-Aug Jang
Assignee (at issue)
SK hynix Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.