Granted Patent
Utility
US 6,586,774 · App. 10/021,006
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
Inventors:
Akihiko Ishibashi, Ayumu Tsujimura, Yoshiaki Hasegawa, Nobuyuki Otsuka, Gaku Sugahara, Ryoko Miyanaga, Toshitaka Shimamoto, Kenji Harafuji, Yuzaburo Ban, Kiyoshi Ohnaka
Patented Case
View Patent ↗
Granted: Jul 1, 2003
Filed: Dec 19, 2001
Inventors
Akihiko Ishibashi
Ayumu Tsujimura
Yoshiaki Hasegawa
Nobuyuki Otsuka
Gaku Sugahara
Ryoko Miyanaga
Toshitaka Shimamoto
Kenji Harafuji
Yuzaburo Ban
Kiyoshi Ohnaka
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.