Granted Patent
Utility
US 6,586,801 · App. 09/845,747
Semiconductor device having breakdown voltage limiter regions
Inventors:
Yasuhiko Onishi, Tatsuhiko Fujihira, Susumu Iwamoto, Takahiro Sato
Patented Case
View Patent ↗
Granted: Jul 1, 2003
Filed: May 1, 2001
Inventors
Yasuhiko Onishi
Tatsuhiko Fujihira
Susumu Iwamoto
Takahiro Sato
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.