Granted Patent
Utility
US 6,586,842 · App. 09/793,993
Dual damascene integration scheme for preventing copper contamination of dielectric layer
Inventors:
Lu You, Fei Wang, Christy Mei-Chu Woo
Patented Case
View Patent ↗
Granted: Jul 1, 2003
Filed: Feb 28, 2001
Inventors
Lu You
Fei Wang
Christy Mei-Chu Woo
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.