IP Library › Granted Patent US 6,589,833
Granted Patent Utility
US 6,589,833 · App. 09/999,230

ESD parasitic bipolar transistors with high resistivity regions in the collector

Inventors: David Hu, Jun Cai
Patented Case View Patent ↗
Granted: Jul 8, 2003 Filed: Dec 3, 2001
Inventors
David Hu
Jun Cai
Assignee (at issue)
Nano Silicon Pte. Ltd.

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Quick Facts
Patent No.
US 6,589,833
App. No.
09/999,230
Filed
2001-12-03
Granted
2003-07-08
Kind
B2