Granted Patent
Utility
US 6,589,841 · App. 10/180,772
Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate
Inventors:
Tuan Pham, Mark T. Ramsbey, Sameer Haddad, Angela T. Hui
Patented Case
View Patent ↗
Granted: Jul 8, 2003
Filed: Jun 25, 2002
Inventors
Tuan Pham
Mark T. Ramsbey
Sameer Haddad
Angela T. Hui
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.